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sth12na60/fi stW12NA60 n - channel enhancement mode fast power mos transistor n typical r ds(on) = 0.44 w n 30v gate to source voltage rating n 100% avalanche tested n repetitive avalanche data at 100 o c n low intrinsic capacitances n gate gharge minimized n reduced threshold voltage spread description this series of power mosfets represents the most advanced high voltage technology. the op- timized cell layout coupled with a new proprietary edge termination concur to give the device low r ds(on) and gate charge, unequalled ruggedness and superior switching performance. applications n high current, high speed switching n switch mode power supplies (smps) n dc-ac converters for welding equipment and uninterruptible power supplies and motor drive internal schematic diagram type v dss r ds(on) i d sth12na60 sth12na60fi stW12NA60 600 v 600 v 600 v <0.6 w <0.6 w <0.6 w 12 a 7a 12 a november 1996 absolute maximum ratings symbol parameter value unit sth/stW12NA60 sth12na60fi v ds drain-source voltage (v gs =0) 600 v v dg r drain- gate voltage (r gs =20k w )600v v gs gate-source voltage 30 v i d drain current (continuous) at t c =25 o c127a i d drain current (continuous) at t c =100 o c7.6 4.4a i dm ( ? ) drain current (pulsed) 48 48 a p tot total dissipation at t c =25 o c 190 80 w derating factor 1.52 0.64 w/ o c v iso insulation withstand voltage (dc) ? 4000 v t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c ( ? ) pulse width limited by safe operating area 1 2 3 to-218 isowatt218 1 2 3 1 2 3 to-247 1/11
thermal data to-218/to-247 isowatt218 r thj-case thermal resistance junction-case max 0.66 1.56 o c/w r thj-amb r t hc- sin k t l thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 30 0.1 300 o c/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max, d <1%) 12 a e as single pulse avalanche energy (starting t j =25 o c, i d =i ar ,v dd =50v) 700 mj e ar repetitive avalanche energy (pulse width limited by t j max, d <1%) 28 mj i ar avalanche current, repetitive or not-repetitive (t c = 100 o c, pulse width limited by t j max, d <1%) 7.6 a electrical characteristics (t case =25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d =250 m av gs = 0 600 v i dss zero gate voltage drain current (v gs =0) v ds =maxrating v ds = max rating x 0.8 t c =125 o c 25 250 m a m a i gss gate-body leakage current (v ds =0) v gs = 30 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs i d =250 m a 2.25 3 3.75 v r ds(on) static drain-source on resistance v gs =10v i d =6a 0.44 0.6 w i d(on) on state drain current v ds >i d(on) xr ds(on)max v gs =10v 12 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward transconductance v ds >i d(on) xr ds(on)max i d =6a 8 12 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v f=1mhz v gs = 0 2500 310 85 3250 410 110 pf pf pf sth12na60/fi - stW12NA60 2/11
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on time rise time v dd =300v i d =6a r g =4.7 w v gs =10v (see test circuit, figure 3) 25 35 35 50 ns ns (di/dt) on turn-on current slope v dd =480v i d =12a r g =47 w v gs =10v (see test circuit, figure 5) 190 a/ m s q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 480 v i d =12a v gs =10v 110 15 47 150 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd =480v i d =12a r g =4.7 w v gs =10v (see test circuit, figure 5) 35 20 57 50 30 80 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ? ) source-drain current source-drain current (pulsed) 12 48 a a v sd ( * ) forward on voltage i sd =12a v gs =0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 12 a di/dt = 100 a/ m s v dd = 100 v t j =150 o c (see test circuit, figure 5) 670 12.7 38 ns m c a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ? ) pulse width limited by safe operating area safe operating areas for to-218 and to-247 safe operating areas for isowatt218 sth12na60/fi - stW12NA60 3/11
thermal impedeance for to-218 and to-247 derating curve for to-218 and to-247 output characteristics thermal impedance for isowatt218 derating curve for isowatt218 transfer characteristics sth12na60/fi - stW12NA60 4/11
transconductance static drain-source on resistance gate charge vs gate-source voltage capacitance variations normalized on resistance vs temperature normalized gate threshold voltage vs temperature sth12na60/fi - stW12NA60 5/11
turn-on current slope turn-off drain-source voltage slope cross-over time switching safe operating area accidental overload area source-drain diode forward characteristics sth12na60/fi - stW12NA60 6/11
fig. 2: unclamped inductive waveforms fig. 3: switching times test circuits for resistive load fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode reverse recovery time fig. 1: unclamped inductive load test circuits sth12na60/fi - stW12NA60 7/11
dim. mm inch min. typ. max. min. typ. max. a 4.7 5.3 0.185 0.208 a1 2.87 0.113 a2 1.5 2.5 0.059 0.098 b 1 1.4 0.039 0.055 b1 2.25 0.088 b2 3.05 3.43 0.120 0.135 c 0.4 0.8 0.015 0.031 d 20.4 21.18 0.803 0.833 e 5.43 5.47 0.213 0.215 e 15.3 15.95 0.602 0.628 l 15.57 0.613 l1 3.7 4.3 0.145 0.169 q 5.3 5.84 0.208 0.230 p 3.5 3.71 0.137 0.146 d q a a2 a1 c e e b1 b b2 l l1 to-247 mechanical data sth12na60/fi - stW12NA60 8/11
dim. mm inch min. typ. max. min. typ. max. a 4.7 4.9 0.185 0.193 c 1.17 1.37 0.046 0.054 d 2.5 0.098 e 0.5 0.78 0.019 0.030 f 1.1 1.3 0.043 0.051 g 10.8 11.1 0.425 0.437 h 14.7 15.2 0.578 0.598 l2 16.2 0.637 l3 18 0.708 l5 3.95 4.15 0.155 0.163 l6 31 1.220 r 12.2 0.480 4 4.1 0.157 0.161 r a c d e h f g l6 l3 l2 l5 123 to-218 (sot-93) mechanical data p025a sth12na60/fi - stW12NA60 9/11
dim. mm inch min. typ. max. min. typ. max. a 5.35 5.65 0.210 0.222 c 3.3 3.8 0.130 0.149 d 2.9 3.1 0.114 0.122 d1 1.88 2.08 0.074 0.081 e 0.45 1 0.017 0.039 f 1.05 1.25 0.041 0.049 g 10.8 11.2 0.425 0.441 h 15.8 16.2 0.622 0.637 l1 20.8 21.2 0.818 0.834 l2 19.1 19.9 0.752 0.783 l3 22.8 23.6 0.897 0.929 l4 40.5 42.5 1.594 1.673 l5 4.85 5.25 0.190 0.206 l6 20.25 20.75 0.797 0.817 m 3.5 3.7 0.137 0.145 n 2.1 2.3 0.082 0.090 u 4.6 0.181 l1 a c d e h g m f l6 123 u l5 l4 d1 n l3 l2 isowatt218 mechanical data p025c sth12na60/fi - stW12NA60 10/11
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of sgs-thomson microelectonics. ? 1996 sgs-thomson microelectronics - printed in italy - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - canada - china - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a . sth12na60/fi - stW12NA60 11/11

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